Corona charge in SiO2: kinetics and surface passivation for high efficiency silicon solar cells

This manuscript presents a method by which capacitance-voltage measurements can be used in conjunction with Kelvin-probe measurements to calculate the location of charge within a dielectric layer. A first order kinetic model for the transport of charge into SiO 2 films after exposure to corona ch...

Полное описание

Библиографические подробности
Главные авторы: Bonilla Osorio, R, Wilshaw, P, Collett, K, Jennison, N, Clayton-Warwick, D, Rands, L
Формат: Conference item
Опубликовано: Elsevier 2016