Growth, structural and optical properties of III-V nanowires for optoelectronic applications
We investigate the growth of III-V nanowires by MOCVD and the structural and optical properties of these nanowires. Binary and ternary nanowires of GaAs, InAs, InP, AlGaAs and InGaAs are achieved. We discuss the nucleation and growth issues involved in fabricating high quality nanowires suitable for...
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| Materiálatiipa: | Conference item |
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2007
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