Picosecond photoluminescence intensity correlation measurements of hot carriers in GaAs/AlxGa1-xAs quantum wells

We have measured the energy relaxation of hot carriers in doped and undoped GaAs/AlxGa1-xAs quantum wells by detecting time-resolved hot luminescence using a two-pulse intensity correlation technique. The results are compared with time-dependent intensity correlation functions calculated using a mod...

সম্পূর্ণ বিবরণ

গ্রন্থ-পঞ্জীর বিবরন
প্রধান লেখক: de Paula, A, Ryan, J, Eakin, H, Tatham, M, Taylor, R, Turberfield, A
বিন্যাস: Journal article
ভাষা:English
প্রকাশিত: Elsevier 1994
বিবরন
সংক্ষিপ্ত:We have measured the energy relaxation of hot carriers in doped and undoped GaAs/AlxGa1-xAs quantum wells by detecting time-resolved hot luminescence using a two-pulse intensity correlation technique. The results are compared with time-dependent intensity correlation functions calculated using a model of energy relaxation by optical phonon interactions which includes non-equilibrium phonon effects. The excellent agreement between calculated and experimental correlation functions shows the great potential of this method in measuring ultrafast relaxation processes.