Picosecond photoluminescence intensity correlation measurements of hot carriers in GaAs/AlxGa1-xAs quantum wells

Picosecond photoluminescence intensity correlation measurements of hot carriers in GaAs/AlxGa1-xAs quantum wells

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We have measured the energy relaxation of hot carriers in doped and undoped GaAs/AlxGa1-xAs quantum wells by detecting time-resolved hot luminescence using a two-pulse intensity correlation technique. The results are compared with time-dependent intensity correlation functions calculated using a mod...

Bibliografiset tiedot
Päätekijät:	de Paula, A, Ryan, J, Eakin, H, Tatham, M, Taylor, R, Turberfield, A
Aineistotyyppi:	Journal article
Kieli:	English
Julkaistu:	Elsevier 1994

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