Full-area passivating hole contact in silicon solar cells enabled by a TiOx/metal bilayer
Passivating contacts, featuring dual functions of defect passivation at the semiconductor surface and extracting one type of charge carrier, are recognized as the key enabler in achieving high-efficiency Si solar cells. In particular, a dopant-free and full-area passivating hole contact is critical...
| Päätekijät: | , , , |
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| Aineistotyyppi: | Journal article |
| Kieli: | English |
| Julkaistu: |
American Chemical Society
2022
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