Growth of InGaN quantum dots on GaN by MOVPE, employing a growth temperature nitrogen anneal
We have studied the growth of InGaN epitaxial layers on GaN by MOVPE (metal-organic vapour phase epitaxy), and have discovered that nanostructures may be formed if a flat epilayer is annealed in molecular nitrogen immediately after growth. The size and density of the nanostructures are shown to be d...
| Main Authors: | , , , , , , |
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| Format: | Conference item |
| Published: |
2003
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