Improved Performance of GaAs-Based Terahertz Emitters via Surface Passivation and Silicon Nitride Encapsulation
We have improved the stability and performance of terahertz (THz) photoconductive (Auston) switches using a combination of (NH4) 2S surface passivation (SP) and silicon nitride (Si3 N4) encapsulation. The influences of SP and encapsulation on the ultrafast electron dynamics in GaAs were examined usi...
| Main Authors: | , , , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
2011
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