DEVELOPMENT OF CHEMICAL BEAM EPITAXY FOR THE DEPOSITION OF GALLIUM NITRIDE
Modern approaches to the growth of high quality gallium nitride thin films have focused on the use of metal-organic vapour phase epitaxy or plasma-assisted gas source molecular beam epitaxy. However, both of these techniques possess limitations. The present study therefore examined a new approach to...
| Main Authors: | , , , , |
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| Format: | Conference item |
| Published: |
1995
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