Carrier dynamics in ion-implanted semiconductors studied by simulation and observation of terahertz emission - art. no. 61180K
We have experimentally measured the terahertz radiation from a series of ion-implanted semiconductors, both from the bare semiconductor surface and from photoconductive switches fabricated on them. GaAs was implanted with As+ ions, and InGaAs and InP with Fe+ ions, and all samples were annealed post...
| Main Authors: | , , , , , |
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| Format: | Conference item |
| Published: |
2006
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