Observation of type-I and type-II excitons in strained Si/SiGe quantum-well structures

The authors report photoluminescence (PL) measurement on a series of SiSiGe quantum-well structures that had different internal strain distributions. When each sample was placed in a high magnetic field, the field-dependent energy shift of the relevant PL peaks revealed either type-I or type-II exci...

Täydet tiedot

Bibliografiset tiedot
Päätekijät: Wang, K, Huang, W, Cheng, H, Sun, G, Soref, R, Nicholas, R, Suen, Y
Aineistotyyppi: Journal article
Kieli:English
Julkaistu: 2007