Room temperature InP/InGaAs nano-ridge lasers grown on silicon emitting at telecom-bands
Semiconductor nano-lasers grown on silicon and emitting at the telecom bands are advantageous ultra-compact coherent light sources for potential Si-based photonic integrated circuit applications. However, realizing room-temperature lasing inside nano-cavities at telecom bands is challenging and has...
| मुख्य लेखकों: | , , , , , , , , , , |
|---|---|
| स्वरूप: | Journal article |
| प्रकाशित: |
Optical Society of America
2018
|
| विषय: |