Room temperature InP/InGaAs nano-ridge lasers grown on silicon emitting at telecom-bands
Semiconductor nano-lasers grown on silicon and emitting at the telecom bands are advantageous ultra-compact coherent light sources for potential Si-based photonic integrated circuit applications. However, realizing room-temperature lasing inside nano-cavities at telecom bands is challenging and has...
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| Fformat: | Journal article |
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Optical Society of America
2018
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| Pynciau: |
| _version_ | 1826267061107556352 |
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| author | Han, Y Ng, WK Ma, C Li, Q Zhu, S Chan, C Ng, KW Lennon, S Taylor, R Wong, KS Lau, KM |
| author_facet | Han, Y Ng, WK Ma, C Li, Q Zhu, S Chan, C Ng, KW Lennon, S Taylor, R Wong, KS Lau, KM |
| author_sort | Han, Y |
| collection | OXFORD |
| description | Semiconductor nano-lasers grown on silicon and emitting at the telecom bands are advantageous ultra-compact coherent light sources for potential Si-based photonic integrated circuit applications. However, realizing room-temperature lasing inside nano-cavities at telecom bands is challenging and has only been demonstrated up to the E band. Here, we report on InP/InGaAs nano-ridge lasers with emission wavelengths ranging from the O, E, and S bands to the C band operating at room temperature with ultra-low lasing thresholds. Using a cycled growth procedure, ridge InGaAs quantum wells inside InP nano-ridges grown on patterned (001) Si substrates are designed as active gain materials. Room-temperature lasing at the telecom bands is achieved by transferring the InP/InGaAs nano-ridges onto a SiO2∕Si substrate for optical excitation. We also show that the operation wavelength of InP/InGaAs nano-lasers can be adjusted by altering the excitation power density and the length of the nano-ridges formed in a single growth run. These results indicate the excellent optical properties of the InP/InGaAs nano-ridges grown on (001) Si substrates and pave the way towards telecom InP/InGaAs nano-laser arrays on CMOS standard Si or silicon-on-insulator substrates. |
| first_indexed | 2024-03-06T20:48:26Z |
| format | Journal article |
| id | oxford-uuid:36bd70a8-59cd-49c5-9440-fed9aae8aacc |
| institution | University of Oxford |
| last_indexed | 2024-03-06T20:48:26Z |
| publishDate | 2018 |
| publisher | Optical Society of America |
| record_format | dspace |
| spelling | oxford-uuid:36bd70a8-59cd-49c5-9440-fed9aae8aacc2022-03-26T13:39:44ZRoom temperature InP/InGaAs nano-ridge lasers grown on silicon emitting at telecom-bandsJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:36bd70a8-59cd-49c5-9440-fed9aae8aaccLaser resonatorsMicrocavity devicesQuantum-well, -wire and -dot devices.Symplectic Elements at OxfordOptical Society of America2018Han, YNg, WKMa, CLi, QZhu, SChan, CNg, KWLennon, STaylor, RWong, KSLau, KMSemiconductor nano-lasers grown on silicon and emitting at the telecom bands are advantageous ultra-compact coherent light sources for potential Si-based photonic integrated circuit applications. However, realizing room-temperature lasing inside nano-cavities at telecom bands is challenging and has only been demonstrated up to the E band. Here, we report on InP/InGaAs nano-ridge lasers with emission wavelengths ranging from the O, E, and S bands to the C band operating at room temperature with ultra-low lasing thresholds. Using a cycled growth procedure, ridge InGaAs quantum wells inside InP nano-ridges grown on patterned (001) Si substrates are designed as active gain materials. Room-temperature lasing at the telecom bands is achieved by transferring the InP/InGaAs nano-ridges onto a SiO2∕Si substrate for optical excitation. We also show that the operation wavelength of InP/InGaAs nano-lasers can be adjusted by altering the excitation power density and the length of the nano-ridges formed in a single growth run. These results indicate the excellent optical properties of the InP/InGaAs nano-ridges grown on (001) Si substrates and pave the way towards telecom InP/InGaAs nano-laser arrays on CMOS standard Si or silicon-on-insulator substrates. |
| spellingShingle | Laser resonators Microcavity devices Quantum-well, -wire and -dot devices. Han, Y Ng, WK Ma, C Li, Q Zhu, S Chan, C Ng, KW Lennon, S Taylor, R Wong, KS Lau, KM Room temperature InP/InGaAs nano-ridge lasers grown on silicon emitting at telecom-bands |
| title | Room temperature InP/InGaAs nano-ridge lasers grown on silicon emitting at telecom-bands |
| title_full | Room temperature InP/InGaAs nano-ridge lasers grown on silicon emitting at telecom-bands |
| title_fullStr | Room temperature InP/InGaAs nano-ridge lasers grown on silicon emitting at telecom-bands |
| title_full_unstemmed | Room temperature InP/InGaAs nano-ridge lasers grown on silicon emitting at telecom-bands |
| title_short | Room temperature InP/InGaAs nano-ridge lasers grown on silicon emitting at telecom-bands |
| title_sort | room temperature inp ingaas nano ridge lasers grown on silicon emitting at telecom bands |
| topic | Laser resonators Microcavity devices Quantum-well, -wire and -dot devices. |
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