GROWTH AND MBMS STUDIES OF REACTION-MECHANISMS FOR INXGA1-XAS CBE
The reaction mechanism involved in the growth of InxGa1-xAs lattice matched to InP by chemical beam epitaxy (CBE) was investigated using growth and modulated beam mass spectrometry studies. Emphasis was placed on elucidating how variations in substrate temperature, indium composition and arsenic ove...
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| Format: | Conference item |
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1992
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