The surface passivation mechanism of graphene oxide for crystalline silicon

The surface passivation mechanism of graphene oxide for crystalline silicon

We have recently demonstrated that low surface recombination velocities on Si crystals are achievable from room temperature graphene oxide (GO) deposition. Intrinsic properties of this material make it an appealing candidate for surface passivation in solar cells. There is, however, very little lite...

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Autors principals:	Vaqueiro-Contreras, M, Walton, AS, Bartlam, C, Byrne, C, Bonilla, RS, Markevich, VP, Halsall, MP, Vijayaraghavan, A, Peaker, AR
Format:	Conference item
Idioma:	English
Publicat:	IEEE 2020

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