The surface passivation mechanism of graphene oxide for crystalline silicon

The surface passivation mechanism of graphene oxide for crystalline silicon

We have recently demonstrated that low surface recombination velocities on Si crystals are achievable from room temperature graphene oxide (GO) deposition. Intrinsic properties of this material make it an appealing candidate for surface passivation in solar cells. There is, however, very little lite...

Полное описание

Библиографические подробности
Главные авторы:	Vaqueiro-Contreras, M, Walton, AS, Bartlam, C, Byrne, C, Bonilla, RS, Markevich, VP, Halsall, MP, Vijayaraghavan, A, Peaker, AR
Формат:	Conference item
Язык:	English
Опубликовано:	IEEE 2020

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