THE EXPERIMENTAL REQUIREMENTS FOR QUANTITATIVE MEASUREMENT OF CARRIER RECOMBINATION AT DEFECTS IN SEMICONDUCTORS USING THE EBIC TECHNIQUE
An analysis is made of the experimental parameters which can cause errors when EBIC measurements are used to investigate the recombination behaviour of defects. In the first part of the paper specimen effects such as the minority carrier diffusion length and depletion region width are considered. In...
المؤلف الرئيسي: | Wilshaw, P |
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التنسيق: | Journal article |
اللغة: | English |
منشور في: |
1989
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مواد مشابهة
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EBIC CONTRAST OF DEFECTS IN SEMICONDUCTORS
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منشور في: (1991) -
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QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
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QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
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منشور في: (1991) -
DISLOCATION RECOMBINATION THEORY FOR SILICON AND INTERPRETATION OF EBIC CONTRAST IN TERMS OF FUNDAMENTAL DISLOCATION PARAMETERS.
حسب: Wilshaw, P, وآخرون
منشور في: (1986)