THE EXPERIMENTAL REQUIREMENTS FOR QUANTITATIVE MEASUREMENT OF CARRIER RECOMBINATION AT DEFECTS IN SEMICONDUCTORS USING THE EBIC TECHNIQUE

THE EXPERIMENTAL REQUIREMENTS FOR QUANTITATIVE MEASUREMENT OF CARRIER RECOMBINATION AT DEFECTS IN SEMICONDUCTORS USING THE EBIC TECHNIQUE

An analysis is made of the experimental parameters which can cause errors when EBIC measurements are used to investigate the recombination behaviour of defects. In the first part of the paper specimen effects such as the minority carrier diffusion length and depletion region width are considered. In...

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Chi tiết về thư mục
Tác giả chính:	Wilshaw, P
Định dạng:	Journal article
Ngôn ngữ:	English
Được phát hành:	1989

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