THE EXPERIMENTAL REQUIREMENTS FOR QUANTITATIVE MEASUREMENT OF CARRIER RECOMBINATION AT DEFECTS IN SEMICONDUCTORS USING THE EBIC TECHNIQUE

類似資料

• EBIC CONTRAST OF DEFECTS IN SEMICONDUCTORS
  著者:: Wilshaw, P, 等
  出版事項: (1991)
• A comparison between the use of EBIC and IBIC microscopy for semiconductor defect analysis
  著者:: Breese, M, 等
  出版事項: (1998)
• QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
  著者:: Fell, T, 等
  出版事項: (1991)
• QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
  著者:: Fell, T, 等
  出版事項: (1991)
• DISLOCATION RECOMBINATION THEORY FOR SILICON AND INTERPRETATION OF EBIC CONTRAST IN TERMS OF FUNDAMENTAL DISLOCATION PARAMETERS.
  著者:: Wilshaw, P, 等
  出版事項: (1986)