GaAs high temperature optical constants and application to optical monitoring within the MOVPE environment

GaAs high temperature optical constants and application to optical monitoring within the MOVPE environment

The real and imaginary components of the GaAs refractive index at temperatures between 20-700 degrees C have been obtained. Measurements were made by comparing the variable angle reflectivity of p-polarized and s-polarized 633 nm wavelength light from a deoxidized GaAs surface. By using these temper...

Disgrifiad llawn

Manylion Llyfryddiaeth
Prif Awduron:	Allwood, D, Klipstein, P, Mason, N, Nicholas, R, Walker, P
Fformat:	Conference item
Cyhoeddwyd:	Minerals, Metals and Materials Soc (TMS) 2000

Eitemau Tebyg

Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE
gan: Maxim A. Ladugin, et al.
Cyhoeddwyd: (2019-06-01)

PHOTOLUMINESCENCE AT HIGH-PRESSURES FROM HIGHLY STRAINED MOVPE GROWN GAAS/GASB/GAAS HETEROSTRUCTURES
gan: Warburton, R, et al.
Cyhoeddwyd: (1991)

Growth parameters of InAs/GaAs quantum dots grown by MOVPE
gan: Roslan, Sharizar, et al.
Cyhoeddwyd: (2006)

Growth parameters of InAs/GaAs quantum dots grown by MOVPE /
gan: Zulkafli Othaman, author, et al.
Cyhoeddwyd: (2007)

Arsenic Diffusion in MOVPE‐Grown GaAs/Ge Epitaxial Structures
gan: V. Orejuela, et al.
Cyhoeddwyd: (2024-09-01)

Growth and application of group III - Antimonides by MOVPE
gan: Klipstein, P, et al.
Cyhoeddwyd: (1996)

ABSORPTION CHARACTERISTICS OF GASB/INAS AND INSB/INAS SLSS GROWN ON (111) GAAS BY MOVPE
gan: Lakrimi, M, et al.
Cyhoeddwyd: (1991)

OPTIMIZATION OF THE GROWTH BY MOVPE OF STRAINED GASB/INAS DOUBLE HETEROJUNCTIONS AND SUPERLATTICES ON [111] GAAS SUBSTRATES
gan: Lakrimi, M, et al.
Cyhoeddwyd: (1992)

GROWTH OF GASB BY MOVPE
gan: Haywood, S, et al.
Cyhoeddwyd: (1988)

Structural and optical characterisation of MOVPE self-assembled InSb quantum dots in InAs and GaSb matrices
gan: Norman, A, et al.
Cyhoeddwyd: (1997)

Growth of InAs/GaSb strained layer superlattices by MOVPE .3. Use of UV absorption to monitor alkyl stability in the reactor
gan: Booker, G, et al.
Cyhoeddwyd: (1997)

Optically pumped room-temperature GaAs nanowire lasers
gan: Saxena, D, et al.
Cyhoeddwyd: (2013)

GASB/INAS HETEROJUNCTIONS GROWN BY MOVPE
gan: Haywood, S, et al.
Cyhoeddwyd: (1991)

GASB HETEROSTRUCTURES GROWN BY MOVPE
gan: Chidley, E, et al.
Cyhoeddwyd: (1988)

Influence of substrate dopant type on the optical properties of GaInAs/InP multiquantum well structures grown by low pressure MOVPE
gan: Wood, A, et al.
Cyhoeddwyd: (1997)

Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wells
gan: Jo Masafumi, et al.
Cyhoeddwyd: (2011-01-01)

Temperature dependent optical properties of single, hierarchically self-assembled GaAs/AlGaAs quantum dots
gan: Ulrich SM, et al.
Cyhoeddwyd: (2006-01-01)

Plasma-Optical Effect in GaAs PIN Photodiodes
gan: M. A. Grado Caffaro, et al.
Cyhoeddwyd: (1993-01-01)

Study of optical properties for Ge - GaAs Heterojunction
gan: Baghdad Science Journal
Cyhoeddwyd: (2011-06-01)

ELECTROLUMINESCENCE OUT TO 2.1 MU-M OBSERVED IN GASB/IN(X)GA(1-X)SB QUANTUM-WELLS GROWN BY MOVPE
gan: Krier, A, et al.
Cyhoeddwyd: (1994)

Mn DOPING OF GaN LAYERS GROWN BY MOVPE
gan: Petr Šimek, et al.
Cyhoeddwyd: (2012-07-01)

Surface and optical characteristics of polycrystalline GaN layer with different pores profile of porous GaAs/GaAs substrate
gan: Md Taib, Muhamad Ikram, et al.
Cyhoeddwyd: (2019)

Optical Investigation of ZnS/GaAs and CuGaS2/GaP Systems
gan: Kh.N. Ahmadova, et al.
Cyhoeddwyd: (2025-03-01)

Optically detected cyclotron resonance of GaAs-based semiconductors
gan: Michels, J, et al.
Cyhoeddwyd: (1994)

Optical spectroscopy of a single GaAs quantum ring
gan: Kim, H
Cyhoeddwyd: (2014)

Optical Response of Aged Doped and Undoped GaAs Samples
gan: Samuel Zambrano-Rojas, et al.
Cyhoeddwyd: (2024-04-01)

Broadband optical ultrafast reflectivity of Si, Ge and GaAs
gan: A. Di Cicco, et al.
Cyhoeddwyd: (2020-10-01)

Optical detection of the integer and fractional quantum Hall effects in GaAs.
gan: Turberfield, A, et al.
Cyhoeddwyd: (1990)

GASB INAS HETEROJUNCTIONS GROWN BY MOVPE - EFFECT OF GAS SWITCHING SEQUENCES ON INTERFACE QUALITY
gan: Lakrimi, M, et al.
Cyhoeddwyd: (1991)

Optical Analysis of 1300 nm GaInNAsSb/GaAs Vertical Cavity Semiconductor Optical Amplifier
gan: Faten Adel Ismael Chaqmaqchee, et al.
Cyhoeddwyd: (2020-04-01)

Optical Analysis of 1300 nm GaInNAsSb/GaAs Vertical Cavity Semiconductor Optical Amplifier
gan: Faten Adel Ismael Chaqmaqchee, et al.
Cyhoeddwyd: (2020-04-01)

Dual wavelength optical duobinary modulation using GaAs–AlGaAs microring resonator
gan: I.S. Amiri, et al.
Cyhoeddwyd: (2018-12-01)

Growth of InGaN quantum dots on GaN by MOVPE, employing a growth temperature nitrogen anneal
gan: Oliver, R, et al.
Cyhoeddwyd: (2003)

THE STUDY OF ELECTROMAGNETIC PROPAGATION CONSTANT ON GaAs-BASED LASERS
gan: Mustafa TEMİZ, et al.
Cyhoeddwyd: (1998-01-01)

MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates
gan: Kazimieras Badokas, et al.
Cyhoeddwyd: (2022-02-01)

Optical properties of GaAs/Al_xGa_{1-x}As/GaAs quantum dot with off-central impurity driven by electric field
gan: V.A. Holovatsky, et al.
Cyhoeddwyd: (2018-03-01)

Phosphide-based optical emitters for monolithic integration with GaAs MESFETs
gan: Ahadian, Joseph F. (Joseph Farzin)
Cyhoeddwyd: (2007)

Optical properties of single InP and GaAs nanowire heterostructures
gan: Jackson, H, et al.
Cyhoeddwyd: (2008)

Optical properties of delta-doped GaAs nipi super-lattices
gan: Johnston, M, et al.
Cyhoeddwyd: (1996)

Impurity-induced modulation of terahertz waves in optically excited GaAs
gan: A. S. Kurdyubov, et al.
Cyhoeddwyd: (2017-11-01)