GaAs high temperature optical constants and application to optical monitoring within the MOVPE environment

GaAs high temperature optical constants and application to optical monitoring within the MOVPE environment

The real and imaginary components of the GaAs refractive index at temperatures between 20-700 degrees C have been obtained. Measurements were made by comparing the variable angle reflectivity of p-polarized and s-polarized 633 nm wavelength light from a deoxidized GaAs surface. By using these temper...

書誌詳細
主要な著者:	Allwood, D, Klipstein, P, Mason, N, Nicholas, R, Walker, P
フォーマット:	Conference item
出版事項:	Minerals, Metals and Materials Soc (TMS) 2000

類似資料

Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE
著者:: Maxim A. Ladugin, 等
出版事項: (2019-06-01)

PHOTOLUMINESCENCE AT HIGH-PRESSURES FROM HIGHLY STRAINED MOVPE GROWN GAAS/GASB/GAAS HETEROSTRUCTURES
著者:: Warburton, R, 等
出版事項: (1991)

Growth parameters of InAs/GaAs quantum dots grown by MOVPE
著者:: Roslan, Sharizar, 等
出版事項: (2006)

Growth parameters of InAs/GaAs quantum dots grown by MOVPE /
著者:: Zulkafli Othaman, author, 等
出版事項: (2007)

Arsenic Diffusion in MOVPE‐Grown GaAs/Ge Epitaxial Structures
著者:: V. Orejuela, 等
出版事項: (2024-09-01)

Growth and application of group III - Antimonides by MOVPE
著者:: Klipstein, P, 等
出版事項: (1996)

ABSORPTION CHARACTERISTICS OF GASB/INAS AND INSB/INAS SLSS GROWN ON (111) GAAS BY MOVPE
著者:: Lakrimi, M, 等
出版事項: (1991)

OPTIMIZATION OF THE GROWTH BY MOVPE OF STRAINED GASB/INAS DOUBLE HETEROJUNCTIONS AND SUPERLATTICES ON [111] GAAS SUBSTRATES
著者:: Lakrimi, M, 等
出版事項: (1992)

GROWTH OF GASB BY MOVPE
著者:: Haywood, S, 等
出版事項: (1988)

Structural and optical characterisation of MOVPE self-assembled InSb quantum dots in InAs and GaSb matrices
著者:: Norman, A, 等
出版事項: (1997)

Growth of InAs/GaSb strained layer superlattices by MOVPE .3. Use of UV absorption to monitor alkyl stability in the reactor
著者:: Booker, G, 等
出版事項: (1997)

Optically pumped room-temperature GaAs nanowire lasers
著者:: Saxena, D, 等
出版事項: (2013)

GASB/INAS HETEROJUNCTIONS GROWN BY MOVPE
著者:: Haywood, S, 等
出版事項: (1991)

GASB HETEROSTRUCTURES GROWN BY MOVPE
著者:: Chidley, E, 等
出版事項: (1988)

Influence of substrate dopant type on the optical properties of GaInAs/InP multiquantum well structures grown by low pressure MOVPE
著者:: Wood, A, 等
出版事項: (1997)

Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wells
著者:: Jo Masafumi, 等
出版事項: (2011-01-01)

Temperature dependent optical properties of single, hierarchically self-assembled GaAs/AlGaAs quantum dots
著者:: Ulrich SM, 等
出版事項: (2006-01-01)

Plasma-Optical Effect in GaAs PIN Photodiodes
著者:: M. A. Grado Caffaro, 等
出版事項: (1993-01-01)

Study of optical properties for Ge - GaAs Heterojunction
著者:: Baghdad Science Journal
出版事項: (2011-06-01)

ELECTROLUMINESCENCE OUT TO 2.1 MU-M OBSERVED IN GASB/IN(X)GA(1-X)SB QUANTUM-WELLS GROWN BY MOVPE
著者:: Krier, A, 等
出版事項: (1994)

Mn DOPING OF GaN LAYERS GROWN BY MOVPE
著者:: Petr Šimek, 等
出版事項: (2012-07-01)

Surface and optical characteristics of polycrystalline GaN layer with different pores profile of porous GaAs/GaAs substrate
著者:: Md Taib, Muhamad Ikram, 等
出版事項: (2019)

Optical Investigation of ZnS/GaAs and CuGaS2/GaP Systems
著者:: Kh.N. Ahmadova, 等
出版事項: (2025-03-01)

Optically detected cyclotron resonance of GaAs-based semiconductors
著者:: Michels, J, 等
出版事項: (1994)

Optical spectroscopy of a single GaAs quantum ring
著者:: Kim, H
出版事項: (2014)

Optical Response of Aged Doped and Undoped GaAs Samples
著者:: Samuel Zambrano-Rojas, 等
出版事項: (2024-04-01)

Broadband optical ultrafast reflectivity of Si, Ge and GaAs
著者:: A. Di Cicco, 等
出版事項: (2020-10-01)

Optical detection of the integer and fractional quantum Hall effects in GaAs.
著者:: Turberfield, A, 等
出版事項: (1990)

GASB INAS HETEROJUNCTIONS GROWN BY MOVPE - EFFECT OF GAS SWITCHING SEQUENCES ON INTERFACE QUALITY
著者:: Lakrimi, M, 等
出版事項: (1991)

Optical Analysis of 1300 nm GaInNAsSb/GaAs Vertical Cavity Semiconductor Optical Amplifier
著者:: Faten Adel Ismael Chaqmaqchee, 等
出版事項: (2020-04-01)

Optical Analysis of 1300 nm GaInNAsSb/GaAs Vertical Cavity Semiconductor Optical Amplifier
著者:: Faten Adel Ismael Chaqmaqchee, 等
出版事項: (2020-04-01)

Dual wavelength optical duobinary modulation using GaAs–AlGaAs microring resonator
著者:: I.S. Amiri, 等
出版事項: (2018-12-01)

Growth of InGaN quantum dots on GaN by MOVPE, employing a growth temperature nitrogen anneal
著者:: Oliver, R, 等
出版事項: (2003)

THE STUDY OF ELECTROMAGNETIC PROPAGATION CONSTANT ON GaAs-BASED LASERS
著者:: Mustafa TEMİZ, 等
出版事項: (1998-01-01)

MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates
著者:: Kazimieras Badokas, 等
出版事項: (2022-02-01)

Optical properties of GaAs/Al_xGa_{1-x}As/GaAs quantum dot with off-central impurity driven by electric field
著者:: V.A. Holovatsky, 等
出版事項: (2018-03-01)

Phosphide-based optical emitters for monolithic integration with GaAs MESFETs
著者:: Ahadian, Joseph F. (Joseph Farzin)
出版事項: (2007)

Optical properties of single InP and GaAs nanowire heterostructures
著者:: Jackson, H, 等
出版事項: (2008)

Optical properties of delta-doped GaAs nipi super-lattices
著者:: Johnston, M, 等
出版事項: (1996)

Impurity-induced modulation of terahertz waves in optically excited GaAs
著者:: A. S. Kurdyubov, 等
出版事項: (2017-11-01)