REACTION MODELS FOR THE EPITAXIAL-GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY

REACTION MODELS FOR THE EPITAXIAL-GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY

Bibliografiske detaljer
Main Authors:	Foord, J, French, C, Levoguer, C, Davies, G
Format:	Journal article
Udgivet:	1993

Lignende værker

REACTION-MECHANISMS GOVERNING THE SELECTED-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
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SELECTIVE-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY - STUDY OF REACTION-MECHANISMS
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SURFACE-REACTION MECHANISMS GOVERNING THE SELECTIVE AREA GROWTH OF III-V COMPOUND SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
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af: Kolodziejski, Leslie A., et al.
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Chemical Beam Epitaxy of Compound Semiconductors
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af: Kolodziejski, Leslie A., et al.
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Chemical Beam Epitaxy of Compound Semiconductors
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Multilayer Epitaxial Heterostructures with Multi-Component III–V:Fe Magnetic Semiconductors
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Step Structures and Epitaxy on Semiconductor Surfaces
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Step Structures and Epitaxy on Semiconductor Surfaces
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Step Structures and Epitaxy on Semiconductor Surfaces
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