ELECTRON-TRANSPORT IN SILICON INVERSION-LAYERS AT HIGH MAGNETIC-FIELDS AND THE INFLUENCE OF SUBSTRATE BIAS
Үндсэн зохиолчид: | Nicholas, R, Kressrogers, E, Kuchar, F, Pepper, M, Portal, J, Stradling, R |
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Формат: | Journal article |
Хэвлэсэн: |
1980
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Ижил төстэй зүйлс
Ижил төстэй зүйлс
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TWO-DIMENSIONAL CONDUCTIVITY IN THE CONTACT REGIONS OF SILICON MOSFETS
-н: Kressrogers, E, зэрэг
Хэвлэсэн: (1980) -
SHUBNIKOV-DEHAAS OSCILLATIONS IN N-CHANNEL SILICON (100) MOSFETS IN MAGNETIC-FIELDS UP TO 35-T
-н: Nicholas, R, зэрэг
Хэвлэсэн: (1979) -
THE CYCLOTRON-RESONANCE LINEWIDTH IN TWO-DIMENSIONAL ELECTRON ACCUMULATION LAYERS IN INSE
-н: Kressrogers, E, зэрэг
Хэвлэсэн: (1983) -
THE ELECTRIC SUB-BAND STRUCTURE OF ELECTRON ACCUMULATION LAYERS IN INSE FROM SHUBINKOV-DEHAAS OSCILLATIONS AND INTER-SUB-BAND RESONANCE
-н: Kressrogers, E, зэрэг
Хэвлэсэн: (1983) -
TIME-DEPENDENT ANOMALOUS THRESHOLD IN SILICON MOS DEVICES FABRICATED ON HIGH-RESISTIVITY SUBSTRATES
-н: Nicholas, R, зэрэг
Хэвлэсэн: (1976)