ELECTRON-TRANSPORT IN SILICON INVERSION-LAYERS AT HIGH MAGNETIC-FIELDS AND THE INFLUENCE OF SUBSTRATE BIAS

Ítems similars

• TWO-DIMENSIONAL CONDUCTIVITY IN THE CONTACT REGIONS OF SILICON MOSFETS
  per: Kressrogers, E, et al.
  Publicat: (1980)
• SHUBNIKOV-DEHAAS OSCILLATIONS IN N-CHANNEL SILICON (100) MOSFETS IN MAGNETIC-FIELDS UP TO 35-T
  per: Nicholas, R, et al.
  Publicat: (1979)
• THE CYCLOTRON-RESONANCE LINEWIDTH IN TWO-DIMENSIONAL ELECTRON ACCUMULATION LAYERS IN INSE
  per: Kressrogers, E, et al.
  Publicat: (1983)
• THE ELECTRIC SUB-BAND STRUCTURE OF ELECTRON ACCUMULATION LAYERS IN INSE FROM SHUBINKOV-DEHAAS OSCILLATIONS AND INTER-SUB-BAND RESONANCE
  per: Kressrogers, E, et al.
  Publicat: (1983)
• TIME-DEPENDENT ANOMALOUS THRESHOLD IN SILICON MOS DEVICES FABRICATED ON HIGH-RESISTIVITY SUBSTRATES
  per: Nicholas, R, et al.
  Publicat: (1976)