ELECTRON-TRANSPORT IN SILICON INVERSION-LAYERS AT HIGH MAGNETIC-FIELDS AND THE INFLUENCE OF SUBSTRATE BIAS

Podobne zapisy

• TWO-DIMENSIONAL CONDUCTIVITY IN THE CONTACT REGIONS OF SILICON MOSFETS
  od: Kressrogers, E, i wsp.
  Wydane: (1980)
• SHUBNIKOV-DEHAAS OSCILLATIONS IN N-CHANNEL SILICON (100) MOSFETS IN MAGNETIC-FIELDS UP TO 35-T
  od: Nicholas, R, i wsp.
  Wydane: (1979)
• THE CYCLOTRON-RESONANCE LINEWIDTH IN TWO-DIMENSIONAL ELECTRON ACCUMULATION LAYERS IN INSE
  od: Kressrogers, E, i wsp.
  Wydane: (1983)
• THE ELECTRIC SUB-BAND STRUCTURE OF ELECTRON ACCUMULATION LAYERS IN INSE FROM SHUBINKOV-DEHAAS OSCILLATIONS AND INTER-SUB-BAND RESONANCE
  od: Kressrogers, E, i wsp.
  Wydane: (1983)
• TIME-DEPENDENT ANOMALOUS THRESHOLD IN SILICON MOS DEVICES FABRICATED ON HIGH-RESISTIVITY SUBSTRATES
  od: Nicholas, R, i wsp.
  Wydane: (1976)