Carrier dynamics in ion-implanted GaAs studied by simulation and observation of terahertz emission
We have experimentally measured the terahertz radiation from a series of ion-implanted semiconductors, both from the bare semiconductor surface and from photoconductive switches fabricated on them. GaAs was implanted with As + ions, and InGaAs and InP with Fe+ ions, and all samples were annealed pos...
| Main Authors: | , , , , |
|---|---|
| Format: | Journal article |
| Language: | English |
| Published: |
2004
|