Carrier dynamics in ion-implanted GaAs studied by simulation and observation of terahertz emission
We have experimentally measured the terahertz radiation from a series of ion-implanted semiconductors, both from the bare semiconductor surface and from photoconductive switches fabricated on them. GaAs was implanted with As + ions, and InGaAs and InP with Fe+ ions, and all samples were annealed pos...
Main Authors: | Lloyd-Hughes, J, Castro-Camus, E, Fraser, MD, Jagadish, C, Johnston, M |
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Format: | Journal article |
Language: | English |
Published: |
2004
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