The quantum Hall effect in an InAs/GaSb based electron-hole system and its current-driven breakdown

The quantum Hall effect in an InAs/GaSb based electron-hole system and its current-driven breakdown

We examine the quantum Hall effect in an electron-hole system and its current-driven breakdown, We find that samples with closely matched electron and hole concentrations have vastly reduced critical cur-rents while those with many more electrons than holes show much larger critical currents, though...

Полное описание

Библиографические подробности
Главные авторы:	Takashina, K, Nicholas, R, Kardynal, B, Mason, N, Maude, D, Portal, J
Формат:	Conference item
Опубликовано:	2002

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