RECENT DEVELOPMENTS IN THE STUDY OF SEMICONDUCTORS BY ATOM PROBE MICROANALYSIS.

RECENT DEVELOPMENTS IN THE STUDY OF SEMICONDUCTORS BY ATOM PROBE MICROANALYSIS.

Pulsed Laser Atom Probe (PLAP) analysis has recently been applied to a range of semiconductor samples in Oxford. It has been shown for the first time that the stoichiometry of III-V semiconductors and of thin amorphous silicon layers, can be accurately analysed by the use of the PLAP. The compositio...

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Sonraí bibleagrafaíochta
Príomhchruthaitheoirí: Grovenor, C, Cerezo, A, Smith, G
Formáid: Journal article
Teanga:English
Foilsithe / Cruthaithe: 1985
Cur síos
Achoimre:Pulsed Laser Atom Probe (PLAP) analysis has recently been applied to a range of semiconductor samples in Oxford. It has been shown for the first time that the stoichiometry of III-V semiconductors and of thin amorphous silicon layers, can be accurately analysed by the use of the PLAP. The composition of the Si/thermal oxide interface, and of native oxide layers, has also been investigated, showing that the native oxide is stoichiometric SiO and that an intermediate SiO layer exists at the Si/thermal oxide interface.

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