A room temperature cathodoluminescence study of dislocations in silicon
Cathodoluminescence has been used to investigate room-temperature light emission from dislocations generated by ion-implantation and abrasion using silicon carbide paper in standard Czochralski grown silicon wafers. Dislocations in the ion implanted material were generated by implantation of either...
| Main Authors: | , , , , , |
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| Format: | Conference item |
| Published: |
2004
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