A room temperature cathodoluminescence study of dislocations in silicon

Cathodoluminescence has been used to investigate room-temperature light emission from dislocations generated by ion-implantation and abrasion using silicon carbide paper in standard Czochralski grown silicon wafers. Dislocations in the ion implanted material were generated by implantation of either...

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Bibliografische gegevens
Hoofdauteurs: Stowe, D, Galloway, SA, Senkader, S, Mallik, K, Falster, R, Wilshaw, P
Formaat: Conference item
Gepubliceerd in: 2004