High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage.
We successfully fabricated nanowire-based complementary metal-oxide semiconductor (NWCMOS) inverter devices by utilizing n- and p-type Si nanowire field-effect-transistors (NWFETs) via a low-temperature fabrication processing technique. We demonstrate that NWCMOS inverter devices can be operated at...
| Главные авторы: | , , , , , , |
|---|---|
| Формат: | Journal article |
| Язык: | English |
| Опубликовано: |
Royal Society of Chemistry
2014
|