High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage.

Lignende værker

• Tunable threshold voltage of an n-type Si nanowire ferroelectric-gate field effect transistor for high-performance nonvolatile memory applications.
  af: Van, N, et al.
  Udgivet: (2014)
• Implementation of floating gate MOSFET in inverter for threshold voltage tunability
  af: Musa F.A.S., et al.
  Udgivet: (2017-01-01)
• Tunable electronic transport characteristics of surface-architecture- controlled ZnO nanowire field effect transistors
  af: Hong, W, et al.
  Udgivet: (2008)
• Simulation Study of Vertically Stacked Lateral Si Nanowires Transistors for 5-nm CMOS Applications
  af: Talib Al-Ameri, et al.
  Udgivet: (2017-01-01)
• Wide-range and area-selective threshold voltage tunability in ultrathin indium oxide transistors
  af: Robert Tseng, et al.
  Udgivet: (2023-08-01)