High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage.
We successfully fabricated nanowire-based complementary metal-oxide semiconductor (NWCMOS) inverter devices by utilizing n- and p-type Si nanowire field-effect-transistors (NWFETs) via a low-temperature fabrication processing technique. We demonstrate that NWCMOS inverter devices can be operated at...
| Main Authors: | , , , , , , |
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| Format: | Journal article |
| Jezik: | English |
| Izdano: |
Royal Society of Chemistry
2014
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