The behavior and transport of hydrogen in silicon solar cells observed through changes in contact resistance
<p style="text-align:justify;">This paper presents a simple method of studying the transport of hydrogen in crystalline silicon, as well as its release from bound forms during annealing at temperatures between 350-450°C. This technique is based upon observations of an increase in th...
Главные авторы: | Hamer, P, Li, H, Chan, C, Sen, C, Bonilla, R, Wilshaw, P |
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Формат: | Conference item |
Опубликовано: |
IEEE
2018
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