Investigation of threading dislocation blocking in strained-layer InGaAs/GaAs heterostructures using scanning cathodoluminescence microscopy
Príomhchruthaitheoirí: | Russell, J, Zou, J, Moon, A, Cockayne, D |
---|---|
Formáid: | Journal article |
Foilsithe / Cruthaithe: |
2000
|
Míreanna comhchosúla
Míreanna comhchosúla
-
Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAs
de réir: RussellHarriott, J, et al.
Foilsithe / Cruthaithe: (1996) -
Investigation of oval defects in InGaAs/GaAs strained-layer heterostructures using cathodoluminescence and wavelength dispersive spectroscopy
de réir: Russell-Harriott, J, et al.
Foilsithe / Cruthaithe: (1998) -
Oval defects in InGaAs/GaAs heterostructures
de réir: Russell-Harriott, J, et al.
Foilsithe / Cruthaithe: (1998) -
Estimation of the MQW InGaAs/GaAs heterostructures stability to the formation of misfit dislocations
de réir: A. A. Maldzhy, et al.
Foilsithe / Cruthaithe: (2006-12-01) -
Misfit dislocations generated from inhomogeneous sources and their critical thicknesses in a InGaAs/GaAs heterostructure grown by molecular beam epitaxy
de réir: Zou, J, et al.
Foilsithe / Cruthaithe: (1997)