Investigation of threading dislocation blocking in strained-layer InGaAs/GaAs heterostructures using scanning cathodoluminescence microscopy
मुख्य लेखकों: | Russell, J, Zou, J, Moon, A, Cockayne, D |
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स्वरूप: | Journal article |
प्रकाशित: |
2000
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समान संसाधन
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Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAs
द्वारा: RussellHarriott, J, और अन्य
प्रकाशित: (1996) -
Investigation of oval defects in InGaAs/GaAs strained-layer heterostructures using cathodoluminescence and wavelength dispersive spectroscopy
द्वारा: Russell-Harriott, J, और अन्य
प्रकाशित: (1998) -
Oval defects in InGaAs/GaAs heterostructures
द्वारा: Russell-Harriott, J, और अन्य
प्रकाशित: (1998) -
Estimation of the MQW InGaAs/GaAs heterostructures stability to the formation of misfit dislocations
द्वारा: A. A. Maldzhy, और अन्य
प्रकाशित: (2006-12-01) -
Misfit dislocations generated from inhomogeneous sources and their critical thicknesses in a InGaAs/GaAs heterostructure grown by molecular beam epitaxy
द्वारा: Zou, J, और अन्य
प्रकाशित: (1997)