Investigation of threading dislocation blocking in strained-layer InGaAs/GaAs heterostructures using scanning cathodoluminescence microscopy

Investigation of threading dislocation blocking in strained-layer InGaAs/GaAs heterostructures using scanning cathodoluminescence microscopy

Dettagli Bibliografici
Autori principali:	Russell, J, Zou, J, Moon, A, Cockayne, D
Natura:	Journal article
Pubblicazione:	2000

Documenti analoghi

Cathodoluminescence study of oval defects in MBE grown InGaAs/GaAs
di: RussellHarriott, J, et al.
Pubblicazione: (1996)

Investigation of oval defects in InGaAs/GaAs strained-layer heterostructures using cathodoluminescence and wavelength dispersive spectroscopy
di: Russell-Harriott, J, et al.
Pubblicazione: (1998)

Oval defects in InGaAs/GaAs heterostructures
di: Russell-Harriott, J, et al.
Pubblicazione: (1998)

Estimation of the MQW InGaAs/GaAs heterostructures stability to the formation of misfit dislocations
di: A. A. Maldzhy, et al.
Pubblicazione: (2006-12-01)

Misfit dislocations generated from inhomogeneous sources and their critical thicknesses in a InGaAs/GaAs heterostructure grown by molecular beam epitaxy
di: Zou, J, et al.
Pubblicazione: (1997)

MISFIT DISLOCATIONS AND CRITICAL THICKNESS IN INGAAS/GAAS HETEROSTRUCTURE SYSTEMS
di: Zou, J, et al.
Pubblicazione: (1993)

Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures
di: S.A. Iliash
Pubblicazione: (2016-04-01)

Transmission electron microscopy study of InGaAs/GaAs structural evolution near the Stranski-Krastanow transformation
di: Wellman, J, et al.
Pubblicazione: (1999)

Structural evolution and the role of dislocations in InGaAs island formation on GaAs (110) and (111)B surfaces
di: Lobo, C, et al.
Pubblicazione: (1998)

Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dots
di: Leon, R, et al.
Pubblicazione: (1996)

Adatom condensation and quantum dot sizes in InGaAs/GaAs (001)
di: Leon, R, et al.
Pubblicazione: (2000)

Lomer-Cottrell misfit dislocations in [001]In0.2Ga0.8As/GaAs single heterostructures
di: Zou, J, et al.
Pubblicazione: (1996)

Inhomogeneous sources of misfit dislocation generation in InxGa1-xAs/GaAs strained-layer heterostructures grown by molecular beam epitaxy
di: Zou, J, et al.
Pubblicazione: (1997)

Temperature-dependent generation of misfit dislocations in In0.2Ga0.8As/GaAs single heterostructures
di: Zou, J, et al.
Pubblicazione: (1996)

Stable and metastable InGaAs/GaAs island shapes and surfactantlike suppression of the wetting transformation
di: Leon, R, et al.
Pubblicazione: (1998)

On-zone axis electron diffraction contrast study of the size of InGaAs/GaAs quantum dots
di: Liao, X, et al.
Pubblicazione: (1998)

Island shape instabilities and surfactant-like effects in the growth of InGaAs/GaAs quantum dots
di: Leon, R, et al.
Pubblicazione: (1999)

Cathodoluminescence of Ultrathin InAs Layers Embedded in GaAs Matrix
di: Qigeng Yan, et al.
Pubblicazione: (2022-08-01)

On the Reliability of Accelerated Testing in AIGaAs/InGaAs/GaAs PHEMTs
di: K. F. Yarn, et al.
Pubblicazione: (2002-01-01)

Multilayers of InGaAs Nanostructures Grown on GaAs(210) Substrates
di: Wang Zhiming, et al.
Pubblicazione: (2010-01-01)

Tailoring GaAs, InAs, and InGaAs nanowires for optoelectronic device applications
di: Joyce, H, et al.
Pubblicazione: (2011)

Tailoring GaAs, InAs, and InGaAs Nanowires for Optoelectronic Device Applications
di: Joyce, H, et al.
Pubblicazione: (2011)

MISFIT DISLOCATIONS LYING ALONG (100) IN [001] GAAS/IN0.25GA0.75AS/GAAS QUANTUM-WELL HETEROSTRUCTURES
di: Zou, J, et al.
Pubblicazione: (1994)

EQUILIBRIUM DISSOCIATION CONFIGURATION OF MISFIT DISLOCATIONS IN LOW STRAINED IN0.1GA0.9AS/GAAS SINGLE HETEROSTRUCTURES
di: Zou, J, et al.
Pubblicazione: (1993)

Atomic-column scanning transmission electron microscopy analysis of misfit dislocations in GaSb/ GaAs quantum dots
di: Delgado, N. Fernandez, et al.
Pubblicazione: (2016)

Improved carrier collection in intermixed InGaAs/GaAs quantum wells
di: Dao, L, et al.
Pubblicazione: (1998)

Growth of GaAs/AlGaAs quantum well lasers and GaAs/InGaAs vertical cavity surface emitting lasers by MBE
di: Li, Chaoyong.
Pubblicazione: (2009)

THE GEOMETRY OF MISFIT DISLOCATIONS WITH RESPECT TO THE STRAINED INTERFACE IN [001] IN0.1GA0.9AS/GAAS SINGLE HETEROSTRUCTURES
di: Zou, J, et al.
Pubblicazione: (1994)

A New AlGaAs/GaAs/InGaAs Lasing Switch Grown by MBE
di: Ming Rong Lee, et al.
Pubblicazione: (2001-01-01)

Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures
di: Paladugu, M, et al.
Pubblicazione: (2008)

Enhancement of Single-Photon Emission Rate from InGaAs/GaAs Quantum-Dot/Nanowire Heterostructure by Wire-Groove Nanocavity
di: Wei Wei, et al.
Pubblicazione: (2019-05-01)

Magneto-photoluminescence study of InGaAs/GaAs quantum wells and quantum dots grown on (111)B GaAs substrate
di: Tyan, S, et al.
Pubblicazione: (2000)

InGaAs/GaAs quantum wells and quantum dots on (111)B orientation
di: Tyan, S, et al.
Pubblicazione: (2001)

The Effects of Interdot Spacing and Dot Size on the Performance of InGaAs/GaAs QDIBSC
di: Sayeda Anika Amin, et al.
Pubblicazione: (2017-01-01)

Growth, structural and optical properties of GaAs, InGaAs and AlGaAs nanowires and nanowire heterostruetures
di: Joyce, H, et al.
Pubblicazione: (2007)

31% European InGaP/GaAs/InGaAs Solar Cells for Space Application
di: Campesato Roberta, et al.
Pubblicazione: (2017-01-01)

Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells
di: M.M. Vinoslavskii, et al.
Pubblicazione: (2018-10-01)

High-performance 1.06-μm InGaAs/GaAs double-quantum-well semiconductor lasers with asymmetric heterostructure layers
di: Qiao, Zhongliang, et al.
Pubblicazione: (2021)

Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light-Sensitive Devices
di: Sergii Golovynskyi, et al.
Pubblicazione: (2017-10-01)

Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE
di: Maxim A. Ladugin, et al.
Pubblicazione: (2019-06-01)