Cathodoluminescence assessment of low temperature gettering in silicon and a novel technique for estimating bulk minority carrier lifetime in silicon
The effect of low temperature anneals (≤500C) on Cz-Si minority carrier lifetime has been investigated using near-band-edge cathodoluminescence (CL) The low temperature anneals are intended to produce efficient gettering by taking advantage of the increasing supersaturation of impurities as temperat...
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| Format: | Conference item |
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2008
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