Growth and characterization of GaAs1and#x2212;xSbx nanowires
We report the structural and optical characterization of GaAs 1-xSbx nanowires (NWs) grown on GaAs (111)B substrates using metalorganic chemical vapour deposition (MOCVD). The NWs are perpendicular to the substrate with almost defect-free zinc blende (ZB) structure. Micro-photoluminescence results d...
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| פורמט: | Conference item |
| יצא לאור: |
2012
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