Hot phonons and non-thermal carrier states in GaN

Hot phonons and non-thermal carrier states in GaN

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Non-thermal carrier states at early times are studied using femtosecond pump-probe spectroscopy in GaN. After the residual chirp on the continuum probe is removed, the normalized difference spectra (NDS) for different probe energies are synchronized, recovering the full time resolution of our laser...

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Bibliografische gegevens
Hoofdauteurs:	Kyhm, K, Taylor, R, O'Sullivan, E, Ryan, J, Cain, N, Roberts, V, Roberts, J, Rota, L
Formaat:	Conference item
Gepubliceerd in:	2002

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Hot phonons and non-thermal carrier states in GaN
door: Kyhm, K, et al.
Gepubliceerd in: (2002)

Hot carrier dynamics and carrier-phonon interaction in GaN
door: Kyhm, K, et al.
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Hot carrier relaxation in GaN : LO phonon scattering and excitonic effects
door: O'Sullivan, E, et al.
Gepubliceerd in: (1999)

Hot carrier relaxation by extreme electron-LO phonon scattering in GaN
door: Hess, S, et al.
Gepubliceerd in: (1999)

Hot carrier relaxation by extreme electron-LO phonon scattering in GaN
door: Hess, S, et al.
Gepubliceerd in: (1999)

Hot carrier relaxation in GaN:LO phonon scattering and excitonic effects
door: O'Sullivan, E, et al.
Gepubliceerd in: (1999)

Time-resolved spectroscopy of non-thermal carrier dynamics in GaN
door: Kyhm, K, et al.
Gepubliceerd in: (2006)

Time-resolved spectroscopy of non-thermal carrier dynamics in GaN
door: Kyhm, K, et al.
Gepubliceerd in: (2006)

Non-equilibrium carrier dynamics and many body effects in highly excited GaN
door: Kyhm, K, et al.
Gepubliceerd in: (2011)

Time-resolved bandgap renormalization and gain in GaN epilayers
door: Hess, S, et al.
Gepubliceerd in: (1998)

Coherent exciton-biexciton dynamics in GaN
door: Kyhm, K, et al.
Gepubliceerd in: (2002)

Coherent exciton-biexciton dynamics in GaN
door: Kyhm, K, et al.
Gepubliceerd in: (2002)

Carrier confinement effects of InxGa1-xN/GaN multi quantum disks with GaN surface barriers grown in GaN nanorods
door: Park, Y, et al.
Gepubliceerd in: (2018)

Comparison of exciton-biexciton with bound exciton-biexciton dynamics in GaN: Quantum beats and temperature dependence of the acoustic-phonon interaction
door: Kyhm, K, et al.
Gepubliceerd in: (2001)

Comparison of exciton-biexciton with bound exciton-biexciton dynamics in GaN: Quantum beats and temperature dependence of the acoustic-phonon interaction
door: Kyhm, K, et al.
Gepubliceerd in: (2001)

Quantum beats of free and bound excitons in GaN
door: Kyhm, K, et al.
Gepubliceerd in: (2001)

Quantum beats of free and bound excitons in GaN
door: Kyhm, K, et al.
Gepubliceerd in: (2001)

Electron-hole plasma mott transition and stimulated emission in GaN
door: Kyhm, K, et al.
Gepubliceerd in: (2004)

Electron-hole plasma mott transition and stimulated emission in GaN
door: Kyhm, K, et al.
Gepubliceerd in: (2004)

Quantum confined carrier transition in a GaN/InGaN/GaN single quantum well bounded by AlGaN barriers
door: Park, Y, et al.
Gepubliceerd in: (2011)

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes
door: Kyaw, Zabu, et al.
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Carrier localization mechanisms in InGaN/GaN quantum wells
door: Watson-Parris, D, et al.
Gepubliceerd in: (2011)

Femtosecond exciton dynamics and the Mott transition in GaN under resonant excitation
door: Hess, S, et al.
Gepubliceerd in: (1999)

Femtosecond exciton dynamics and the mott transition in GaN under resonant excitation
door: Hess, S, et al.
Gepubliceerd in: (1999)

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer
door: Sun, Xiaowei, et al.
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Reduced carrier cooling in GaAs v-groove quantum wires due to non-equilibrium phonon population
door: Freyland, J, et al.
Gepubliceerd in: (1996)

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata
door: Zhang, Zi-Hui, et al.
Gepubliceerd in: (2013)

Dynamics of localized carriers in InGaN multi-quantum wells
door: Kyhm, K, et al.
Gepubliceerd in: (2006)

Dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness
door: Na, J, et al.
Gepubliceerd in: (2006)

Optical gain in GaN epilayers
door: Hess, S, et al.
Gepubliceerd in: (1998)

Optical gain in GaN epilayers
door: Hess, S, et al.
Gepubliceerd in: (1998)

Dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness
door: Na, J, et al.
Gepubliceerd in: (2006)

Free carrier screening in coupled asymmetric GaN quantum discs
door: Lee, K, et al.
Gepubliceerd in: (2006)

Electric field dependence of optical phonon frequencies in wurtzite GaN observed in GaN high electron mobility transistors
door: Dreyer, Cyrus E., et al.
Gepubliceerd in: (2017)

Carrier dynamics of InxGa1-xN quantum disks embedded in GaN nanocolumns
door: Holmes, M, et al.
Gepubliceerd in: (2011)

Carrier dynamics of InxGa1-xN quantum disks embedded in GaN nanocolumns
door: Holmes, M, et al.
Gepubliceerd in: (2011)

Characterization of tunneling and free-carrier screening in coupled asymmetric GaN/AlGaN quantum discs
door: Lee, K, et al.
Gepubliceerd in: (2007)

Dynamics of resonantly excited excitons in GaN
door: Hess, S, et al.
Gepubliceerd in: (1998)

Dynamics of resonantly excited excitons in GaN
door: Hess, S, et al.
Gepubliceerd in: (1998)

Ultrafast optical absorption measurements of electron-phonon scattering in GaAs quantum wells
door: Turner, K, et al.
Gepubliceerd in: (1996)