Hot phonons and non-thermal carrier states in GaN

Hot phonons and non-thermal carrier states in GaN

Показать другие версии (1)

Non-thermal carrier states at early times are studied using femtosecond pump-probe spectroscopy in GaN. After the residual chirp on the continuum probe is removed, the normalized difference spectra (NDS) for different probe energies are synchronized, recovering the full time resolution of our laser...

Полное описание

Библиографические подробности
Главные авторы:	Kyhm, K, Taylor, R, O'Sullivan, E, Ryan, J, Cain, N, Roberts, V, Roberts, J, Rota, L
Формат:	Conference item
Опубликовано:	2002

Схожие документы

Hot phonons and non-thermal carrier states in GaN
по: Kyhm, K, и др.
Опубликовано: (2002)

Hot carrier dynamics and carrier-phonon interaction in GaN
по: Kyhm, K, и др.
Опубликовано: (2005)

Hot carrier relaxation in GaN : LO phonon scattering and excitonic effects
по: O'Sullivan, E, и др.
Опубликовано: (1999)

Hot carrier relaxation by extreme electron-LO phonon scattering in GaN
по: Hess, S, и др.
Опубликовано: (1999)

Hot carrier relaxation by extreme electron-LO phonon scattering in GaN
по: Hess, S, и др.
Опубликовано: (1999)

Hot carrier relaxation in GaN:LO phonon scattering and excitonic effects
по: O'Sullivan, E, и др.
Опубликовано: (1999)

Time-resolved spectroscopy of non-thermal carrier dynamics in GaN
по: Kyhm, K, и др.
Опубликовано: (2006)

Time-resolved spectroscopy of non-thermal carrier dynamics in GaN
по: Kyhm, K, и др.
Опубликовано: (2006)

Non-equilibrium carrier dynamics and many body effects in highly excited GaN
по: Kyhm, K, и др.
Опубликовано: (2011)

Time-resolved bandgap renormalization and gain in GaN epilayers
по: Hess, S, и др.
Опубликовано: (1998)

Coherent exciton-biexciton dynamics in GaN
по: Kyhm, K, и др.
Опубликовано: (2002)

Coherent exciton-biexciton dynamics in GaN
по: Kyhm, K, и др.
Опубликовано: (2002)

Carrier confinement effects of InxGa1-xN/GaN multi quantum disks with GaN surface barriers grown in GaN nanorods
по: Park, Y, и др.
Опубликовано: (2018)

Comparison of exciton-biexciton with bound exciton-biexciton dynamics in GaN: Quantum beats and temperature dependence of the acoustic-phonon interaction
по: Kyhm, K, и др.
Опубликовано: (2001)

Comparison of exciton-biexciton with bound exciton-biexciton dynamics in GaN: Quantum beats and temperature dependence of the acoustic-phonon interaction
по: Kyhm, K, и др.
Опубликовано: (2001)

Quantum beats of free and bound excitons in GaN
по: Kyhm, K, и др.
Опубликовано: (2001)

Quantum beats of free and bound excitons in GaN
по: Kyhm, K, и др.
Опубликовано: (2001)

Electron-hole plasma mott transition and stimulated emission in GaN
по: Kyhm, K, и др.
Опубликовано: (2004)

Electron-hole plasma mott transition and stimulated emission in GaN
по: Kyhm, K, и др.
Опубликовано: (2004)

Quantum confined carrier transition in a GaN/InGaN/GaN single quantum well bounded by AlGaN barriers
по: Park, Y, и др.
Опубликовано: (2011)

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes
по: Kyaw, Zabu, и др.
Опубликовано: (2014)

Carrier localization mechanisms in InGaN/GaN quantum wells
по: Watson-Parris, D, и др.
Опубликовано: (2011)

Femtosecond exciton dynamics and the Mott transition in GaN under resonant excitation
по: Hess, S, и др.
Опубликовано: (1999)

Femtosecond exciton dynamics and the mott transition in GaN under resonant excitation
по: Hess, S, и др.
Опубликовано: (1999)

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer
по: Sun, Xiaowei, и др.
Опубликовано: (2013)

Reduced carrier cooling in GaAs v-groove quantum wires due to non-equilibrium phonon population
по: Freyland, J, и др.
Опубликовано: (1996)

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata
по: Zhang, Zi-Hui, и др.
Опубликовано: (2013)

Dynamics of localized carriers in InGaN multi-quantum wells
по: Kyhm, K, и др.
Опубликовано: (2006)

Dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness
по: Na, J, и др.
Опубликовано: (2006)

Optical gain in GaN epilayers
по: Hess, S, и др.
Опубликовано: (1998)

Optical gain in GaN epilayers
по: Hess, S, и др.
Опубликовано: (1998)

Dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness
по: Na, J, и др.
Опубликовано: (2006)

Free carrier screening in coupled asymmetric GaN quantum discs
по: Lee, K, и др.
Опубликовано: (2006)

Electric field dependence of optical phonon frequencies in wurtzite GaN observed in GaN high electron mobility transistors
по: Dreyer, Cyrus E., и др.
Опубликовано: (2017)

Carrier dynamics of InxGa1-xN quantum disks embedded in GaN nanocolumns
по: Holmes, M, и др.
Опубликовано: (2011)

Carrier dynamics of InxGa1-xN quantum disks embedded in GaN nanocolumns
по: Holmes, M, и др.
Опубликовано: (2011)

Characterization of tunneling and free-carrier screening in coupled asymmetric GaN/AlGaN quantum discs
по: Lee, K, и др.
Опубликовано: (2007)

Dynamics of resonantly excited excitons in GaN
по: Hess, S, и др.
Опубликовано: (1998)

Dynamics of resonantly excited excitons in GaN
по: Hess, S, и др.
Опубликовано: (1998)

Ultrafast optical absorption measurements of electron-phonon scattering in GaAs quantum wells
по: Turner, K, и др.
Опубликовано: (1996)