Cathodoluminescence assessment of annealed silicon and a novel technique for estimating minority carrier lifetime in silicon
The effect of low-temperature anneals (≤500 °C) on Cz-Si minority carrier lifetime has been investigated using near-band-edge cathodoluminescence (CL). The low-temperature anneals are intended to produce efficient gettering by taking advantage of the increasing supersaturation of impurities as tempe...
| Autores principales: | , , |
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| Formato: | Conference item |
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2009
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