$Characterisation of nitride thin films by electron backscatter diffraction and electron channelling contrast imaging$

Characterisation of nitride thin films by electron backscatter diffraction and electron channelling contrast imaging

In the present paper the authors describe the use of electron backscatter diffraction (EBSD) mapping and electron channelling contrast imaging (in the scanning electron microscope) to study tilt, strain, atomic steps and dislocations in epitaxial GaN thin films. Results from epitaxial GaN thin films...

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Hlavní autoři:	Trager-Cowan, C, Sweeney, F, Winkelmann, A, Wilkinson, A, Trimby, P, Day, A, Gholinia, A, Schmidt, N, Parbrook, P, Watson, I
Médium:	Journal article
Jazyk:	English
Vydáno:	2006

Characterisation of nitride thin films by electron backscatter diffraction and electron channelling contrast imaging

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