Characterisation of nitride thin films by electron backscatter diffraction and electron channelling contrast imaging
In the present paper the authors describe the use of electron backscatter diffraction (EBSD) mapping and electron channelling contrast imaging (in the scanning electron microscope) to study tilt, strain, atomic steps and dislocations in epitaxial GaN thin films. Results from epitaxial GaN thin films...
| প্রধান লেখক: | , , , , , , , , , |
|---|---|
| বিন্যাস: | Journal article |
| ভাষা: | English |
| প্রকাশিত: |
2006
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