High quality epitaxial graphene by hydrogen-etching of 3C-SiC(111) thin-film on Si(111)
Etching with atomic hydrogen, as a preparation step before the high-temperature growth process of graphene onto a thin 3C-SiC film grown on Si(111), greatly improves the structural quality of topmost graphene layers. Pit formation and island coalescence, which are typical of graphene growth by SiC g...
| Main Authors: | , , , , , |
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| Format: | Journal article |
| Published: |
IOP Press
2017
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