SELECTIVE AREA GROWTH OF III-V-COMPOUND SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
The reactions of triethylgallium (TEG) on a silicon nitride surface have been investigated to determine the underlying causes for selective area epitaxy. Using the techniques of X-ray photo electron spectroscopy and temperature programmed desorption, TEG is found to weakly adsorb on defect sites at...
| Main Authors: | , , , |
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| Format: | Conference item |
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1992
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