Atomic layer deposited electron transport Layers in efficient organometallic halide perovskite devices
Amorphous TiO2 and SnO2 electron transport layers (ETLs) were deposited by low-temperature atomic layer deposition (ALD). Surface morphology and x-ray photoelectron spectroscopy (XPS) indicate uniform and pinhole free coverage of these ALD hole blocking layers. Both mesoporous and planar perovskite...
| Главные авторы: | , , , , , , , , , |
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| Формат: | Conference item |
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Cambridge University Press
2018
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