On the location and stability of charge in SiO2/SiNx dielectric double layers used for silicon surface passivation
Dielectric double layers of thermal silicon dioxide-chemical vapour deposition (CVD) silicon nitride are found to produce excellent passivation of silicon surfaces by combining a chemical reduction of surface defect states, with a field effect reduction of carriers at the surface due to charge in th...
| Autori principali: | , , , |
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| Natura: | Journal article |
| Lingua: | English |
| Pubblicazione: |
American Institute of Physics Inc.
2014
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