A COMPARATIVE-STUDY OF THE ADSORPTION OF HOT-FILAMENT ACTIVATED HYDROCARBONS ON SILICON, GALLIUM-ARSENIDE AND CVD DIAMOND
Adsorption studies of hot filament activated methane and methane-hydrogen mixtures on non-diamond and diamond surfaces reveal considerable differences in both the nature of the species formed on the surface and the subsequent surface lifetimes of these forms. In the case of GaAs(100), no evidence is...
Main Authors: | Chua, L, Jackman, R, Kingsley, C, Foord, J |
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פורמט: | Conference item |
יצא לאור: |
1994
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פריטים דומים
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יצא לאור: (1993) -
RECOMBINATION AT DISLOCATIONS IN SILICON AND GALLIUM-ARSENIDE
מאת: Wilshaw, P, et al.
יצא לאור: (1989) -
A ROUTE FOR THE FORMATION OF CH2 SPECIES DURING DIAMOND CVD
מאת: Jackman, R, et al.
יצא לאור: (1995) -
VLSI fabrication principles : silicon and gallium arsenide /
מאת: 359597 Ghandi, Sorab K.
יצא לאור: (1994) -
VLSI fabrication principles: silicon and gallium arsenide/
מאת: 359597 Ghandi, Sorab K.
יצא לאור: (1983)