Type-I/type-II exciton in strained Si/SiGe multi-QWs
Using magneto-luminescence (ML) measurement, we have observed the formation of magneto-excitons with either type-I or type-II band alignment depending on the strain distribution in the Si/SiGe quantum well structures. This observation is consistent with the analysis of strain-induced band shifting a...
| Main Authors: | , , , , , , |
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| Format: | Conference item |
| Published: |
2008
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