The role of chemical disorder and structural freedom in radiation-induced amorphization of silicon carbide deduced from electron spectroscopy and ab initio simulations
Chemical disorder has previously been proposed as an explanation for the anomalously facile amorphization of silicon carbide (SiC), on the basis of topological connectivity arguments alone. In this exploratory study, “amorphous” (formally, aperiodic) SiC structures produced in ab initio molecular dy...
| Main Authors: | , , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
Elsevier
2018
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